Toshiba TRSxE65F SiC Schottky Barrier Diodes
Toshiba TRSxE65F SiC Schottky Barrier Diodes exhibit the chip design of 2nd generation and come in TRS6E65F and TRS8E65F variants. The TRSxE65F diodes feature high surge current, small junction capacitance, and small reverse current. These diodes are available in 10.05mm x 15.3mm x 4.45mm dimensions. The Toshiba TRSxE65F Schottky barrier diodes are ideal for power factor correction, uninterruptible power supplies, and DC-DC converters.
Features
- TRS6E65F:
- Chip design of 2nd generation
- IFSM=55A maximum high surge current capability
- Cj=22pF typical small junction capacitance
- IR=0.3µA small reverse current
- TRS8E65F:
- Chip design of 2nd generation
- IFSM=69A maximum high surge current capability
- Cj=28pF typical small junction capacitance
- IR=0.4µA small reverse current
Applications
- Power factor correction
- Solar inverters
- Uninterruptible power supplies
- DC-DC converters
Mechanical Dimensions
Performace Graph
Application Note
View Results ( 7 ) Page
| Part Number | Datasheet | If - Forward Current | Ifsm - Forward Surge Current | Ir - Reverse Current |
|---|---|---|---|---|
| TRS8E65F,S1Q |  |
8 A | 69 A | 400 nA |
| TRS2E65F,S1Q | |
2 A | 21 A | 200 nA |
| TRS10E65F,S1Q | |
10 A | 83 A | 500 nA |
| TRS12E65F,S1Q | |
12 A | 97 A | 600 nA |
| TRS3E65F,S1Q | |
3 A | 27 A | 200 nA |
| TRS4E65F,S1Q | |
4 A | 39 A | 200 nA |
| TRS6E65F,S1Q | |
6 A | 55 A | 300 nA |
Published: 2020-04-02
| Updated: 2024-11-11