HiPerFET Series MOSFETs

Results: 105
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging

IXYS MOSFETs 200V 120A
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 120 A 17 mOhms - 20 V, 20 V 4 V 300 nC - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 150 Amps 150V 0.0125 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 150 A 12.5 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 26 Amps 900V 0.3 Rds
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 26 A 300 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 50 Amps 500V 0.1 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 50 A 100 mOhms - 20 V, 20 V - 55 C + 150 C 520 W Enhancement HyperFET Tube

IXYS MOSFETs 300V 90A
Datasheet
Non-Stocked
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 90 A 33 mOhms - 20 V, 20 V 4 V 360 nC - 55 C + 150 C 560 W Enhancement HyperFET Tube