HiPerFET Series MOSFETs

Results: 105
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
IXYS MOSFETs DIODE Id48 BVdass500
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 48 A 100 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs TO220 1KV 5A N-CH POLAR
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 1 kV 2.3 A 2.8 Ohms - 30 V, 30 V 3 V 33.4 nC - 55 C + 150 C 42 W Enhancement HiPerFET Tube
IXYS MOSFETs TO3P 200V 72A N-CH X3CLASS
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFETs 180 Amps 70V 0.006 Rds
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 70 V 180 A 6 mOhms - 20 V, 20 V - 55 C + 150 C 400 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 38A
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 130 mOhms - 20 V, 20 V 2.5 V 330 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube

IXYS MOSFETs 800V 34A
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 34 A 240 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 1KV 10A
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 10 A 1.2 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 12 Amps 1000V 1.05 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 10 A 1.2 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFETs 11 Amps 800V
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 11 A 950 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 1KV 12A
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 12 A 1.05 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 900V 12A
Datasheet
Non-Stocked
Min.: 60
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 12 A 1.1 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 13 Amps 1000V 0.9 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 12.5 A 900 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 800V 13A
Datasheet
Non-Stocked
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 800 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 13 Amps 800V 0.8 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 700 mOhms - 20 V, 20 V - 55 C + 150 C 250 W Enhancement HyperFET Tube

IXYS MOSFETs 13 Amps 900V 0.8 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 13 A 800 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 15 Amps 600V
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 15 A 500 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 800V 15A
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 15 A 600 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 800V 15A
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 15 A 600 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 20A
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 350 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 500V 21A
Datasheet
Non-Stocked
Min.: 90
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 21 A 250 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 300V 40A
Datasheet
Non-Stocked Lead-Time 29 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 40 A 85 mOhms - 20 V, 20 V 4 V 177 nC - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 42 Amps 200V
Datasheet
Non-Stocked Lead-Time 29 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 42 A 60 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs DIODE Id50 BVdass200
Datasheet
Non-Stocked Lead-Time 29 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 45 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 200V 58A
Datasheet
Non-Stocked
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 58 A 40 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 67 Amps 100V
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 67 A 25 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube