IXYS IXFL38N100 Series MOSFETs

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
IXYS MOSFETs 38 Amps 1000V 0.21 Rds
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 29 A 230 mOhms - 30 V, 30 V 3.5 V 350 nC - 55 C + 150 C 520 W Enhancement HiPerFET Tube
IXYS MOSFETs Q2-Class HiperFET 1000, 22A
Datasheet
Non-Stocked
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 22 A 280 mOhms - 30 V, 30 V - 55 C + 150 C 380 W Enhancement HiPerFET Tube