HybridPACK MOSFET Modules

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Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Infineon Technologies MOSFET Modules HYBRID PACK DRIVE G2 SIC
Datasheet
2In Stock
More Info Available
Min.: 1
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SiC Press Fit Module N-Channel 6 Channel 1.2 kV 500 A 1.87 mOhms - 5 V, +19 V 3.98 V - 40 C + 175 C Drive G2 Tray
Infineon Technologies MOSFET Modules HYBRID PACK DRIVE G2 SIC
Datasheet
4In Stock
Min.: 1
Mult.: 1

SiC Press Fit N-Channel 1.4 kV 310 A - 10 V, + 23 V 4.55 V - 40 C + 175 C Drive G2 Tray