+370 64003780

Part of the TTI Family of Specialists Contact Mouser (Lithuania) +370 64003780 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

TRS8E65F,S1Q

Name: Toshiba TRS8E65F,S1Q
Brand: Toshiba
SKU: 757-TRS8E65F,S1Q
Price: 4.78 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-TRS8E65F,S1Q

Mfr. No:

TRS8E65F,S1Q

Mfr.:

Toshiba

Description:

SiC Schottky Diodes V=650 IF=8A

Datasheet:

TRS8E65F,S1Q Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba TRS8E65F,S1Q

In Stock: 7

Stock:: 7 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,78 €	4,78 €
	2,06 €	20,60 €
	2,05 €	205,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220-2
Configuration:	Single
If - Forward Current:	8 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.45 V
Ifsm - Forward Surge Current:	69 A
Ir - Reverse Current:	400 nA
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	Toshiba
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	50
Subcategory:	Diodes & Rectifiers
Part # Aliases:	TRS8E65F,S1Q(S
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TRS8E65F,S1Q Datasheet (PDF)

USHTS:: 8541100080
ECCN:: EAR99

SiC Schottky Barrier Diodes

Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.

TRSxE65F SiC Schottky Barrier Diodes

Toshiba TRSxE65F SiC Schottky Barrier Diodes exhibit the chip design of 2nd generation and come in TRS6E65F and TRS8E65F variants. The TRSxE65F diodes feature high surge current, small junction capacitance, and small reverse current. These diodes are available in 10.05mm x 15.3mm x 4.45mm dimensions. The Toshiba TRSxE65F Schottky barrier diodes are ideal for power factor correction, uninterruptible power supplies, and DC-DC converters.