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TRS12E65F,S1Q

Name: Toshiba TRS12E65F,S1Q
Brand: Toshiba
SKU: 757-TRS12E65F,S1Q
Price: 3.26 EUR
Availability: OutOfStock

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Mouser No:

757-TRS12E65F,S1Q

Mfr. No:

TRS12E65F,S1Q

Mfr.:

Toshiba

Description:

SiC Schottky Diodes RECT 650V 12A RDL SIC SKY

Datasheet:

TRS12E65F,S1Q Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,26 €	3,26 €
	2,13 €	21,30 €
	1,55 €	155,00 €
	1,28 €	640,00 €
	1,21 €	1.210,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220F-2L
Configuration:	Single
If - Forward Current:	12 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.45 V
Ifsm - Forward Surge Current:	97 A
Ir - Reverse Current:	600 nA
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	Toshiba
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Pd - Power Dissipation:	115 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	50
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V
Part # Aliases:	TRS12E65F,S1Q(S
Unit Weight:	2 g

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Datasheet

TRS12E65F,S1Q Datasheet (PDF)

USHTS:: 8541100080
ECCN:: EAR99

TRSxE65F SiC Schottky Barrier Diodes

Toshiba TRSxE65F SiC Schottky Barrier Diodes exhibit the chip design of 2nd generation and come in TRS6E65F and TRS8E65F variants. The TRSxE65F diodes feature high surge current, small junction capacitance, and small reverse current. These diodes are available in 10.05mm x 15.3mm x 4.45mm dimensions. The Toshiba TRSxE65F Schottky barrier diodes are ideal for power factor correction, uninterruptible power supplies, and DC-DC converters.

SiC Schottky Barrier Diodes

Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.