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RGS80TSX2GC11

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Mouser No:

755-RGS80TSX2GC11

Mfr. No:

RGS80TSX2GC11

Mfr.:

ROHM Semiconductor

Description:

IGBTs 10 s Short-Circuit Tolerance, 1200V 40A, Field Stop Trench IGBT

Datasheet:

RGS80TSX2GC11 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RGS80TSX2GC11

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	IGBTs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247N-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.1 V
Maximum Gate Emitter Voltage:	30 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	555 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	ROHM Semiconductor
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Gate-Emitter Leakage Current:	500 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	450
Subcategory:	IGBTs
Part # Aliases:	RGS80TSX2

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Datasheet

RGS80TSX2GC11 Datasheet (PDF)

PCN

Product Change Notification 2024-10-15 (PDF)

Specification Sheets

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

RGSx0TSX2x Field Stop Trench IGBTs

ROHM Semiconductor RGSx0TSX2x Field Stop Trench IGBTs are 10µs SCSOA (Short Circuit Safety Operating Area) guaranteed Insulated Gate Bipolar Transistors, suitable for general inverter, UPS, PV inverters, and power conditioner applications. The RGSx0TSX2x IGBTs offer low conduction loss that contributes to reduced size and improved efficiency. These devices utilize original trench-gate and thin-wafer technologies. These technologies help achieve low collector-emitter saturation voltage (V_CE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.