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UFB25SC12E1BC3N

Name: onsemi UFB25SC12E1BC3N
Brand: onsemi
SKU: 772-UFB25SC12E1BC3N
Price: 127.09 EUR
Availability: InStock

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Mouser No:

772-UFB25SC12E1BC3N

Mfr. No:

UFB25SC12E1BC3N

Mfr.:

onsemi

Description:

Discrete Semiconductor Modules 1200V/25ASICFULL-BRIDGEG3E1BN

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

UFB25SC12E1BC3N Datasheet

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More Information

Learn more about onsemi UFB25SC12E1BC3N

In Stock: 86

Stock:: 86

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On Order:: 96
Factory Lead Time:: 34

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Est. Tariff:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	127,09 €	127,09 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	SiC Modules
Type:	Full Bridge
Technology:	SiC
Vf - Forward Voltage:	1.4 V
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Mounting Style:	Screw Mount
Package/Case:	E1B
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	UFBxxSC
Packaging:	Tray
Brand:	onsemi
Configuration:	Cascode
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	16.8 ns
Id - Continuous Drain Current:	36 A
Pd - Power Dissipation:	114 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	45 mOhms
Rise Time:	22.4 ns
Factory Pack Quantity:	24
Subcategory:	Discrete Semiconductor Modules
Tradename:	SiC FET Module
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	70 ns
Typical Turn-On Delay Time:	52.8 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	6 V

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Datasheet

UFB25SC12E1BC3N Datasheet

PCN

Product Change Notification 2025-4-11 (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

SiC E1B Modules

onsemi SiC E1B Modules feature a unique cascode circuit with a normally on SiC JFET co-packaged with a Si MOSFET, resulting in a normally off SiC FET. The SiC E1B series offers a silicon-like gate drive that supports unipolar gate drives compatible with Si IGBTs, Si FETs, SiC MOSFETs, and Si super junction devices. Housed in the E1B module package, these onsemi devices boast ultra-low gate charge and excellent switching characteristics, making them ideal for hard-switching and ZVS soft-switching applications. The modules incorporate advanced Ag sintering die attach technology for superior power cycling and thermal performance.