It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

NVHL080N120SC1

Name: onsemi NVHL080N120SC1
Brand: onsemi
SKU: 863-NVHL080N120SC1
Price: 13.8 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NVHL080N120SC1

Mfr. No:

NVHL080N120SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS 80MW 1200 V 80 mOhms 44A

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

NVHL080N120SC1 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVHL080N120SC1

In Stock: 1.182

Stock:: 1.182 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	13,80 €	13,80 €
	9,98 €	99,80 €
	9,43 €	1.131,60 €
	9,00 €	4.590,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	178 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	10 ns
Forward Transconductance - Min:	13 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	20 ns
Series:	NVHL080N120SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	13 ns
Unit Weight:	6 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVHL080N120SC1 Datasheet

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs are 1200V, 80mΩ MOSFETs that provide superior switching performance and high reliability. These MOSFETs offer low ON resistance and come in compact chip sizes, ensuring low capacitance and gate charge. The EliteSiC N-Channel MOSFETs feature high efficiency, fast operation frequency, high-speed switching, increased power density, reduced EMI, and reduced system size. These MOSFETs come in TO247-3L/TO247-3LD packages. The NVHL080N120SC1 and NVHL080N120SC1A MOSFETs are qualified for automotive according to AEC-Q101 grade certification.