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NVBLS0D5N04CTXG

Name: onsemi NVBLS0D5N04CTXG
Brand: onsemi
SKU: 863-NVBLS0D5N04CTXG
Price: 8.29 EUR
Availability: InStock

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Mouser No:

863-NVBLS0D5N04CTXG

Mfr. No:

NVBLS0D5N04CTXG

Mfr.:

onsemi

Description:

MOSFETs T6 40V SG SINGLE NCH TOLL 0.5 MOHMS MAX

Datasheet:

NVBLS0D5N04CTXG Datasheet

ECAD Model:

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In Stock: 874

Stock:: 874 Can Dispatch Immediately

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Factory Lead Time:: 41 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	8,29 €	8,29 €
	5,74 €	57,40 €
	4,67 €	467,00 €
	4,66 €	2.330,00 €
	4,64 €	4.640,00 €
Full Reel (Order in multiples of 2000)
	3,97 €	7.940,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-LL8-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	300 A
Rds On - Drain-Source Resistance:	570 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	185 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	198.4 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Country of Assembly:	PH
Country of Diffusion:	JP
Country of Origin:	PH
Product Type:	MOSFETs
Series:	NVBLS0D5N04C
Factory Pack Quantity:	2000
Subcategory:	Transistors

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Datasheet

NVBLS0D5N04CTXG Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Automotive Power MOSFETs

onsemi Power MOSFETs feature low R_DS(on) to minimize conduction losses and low Q_g/capacitance to minimize driver losses. These power MOSFETs lower switching losses/Electro-Magnetic Interference (EMI). onsemi Automotive Power MOSFETs come in a TO-Leadless (TOLL) package for efficient designs with high thermal performance. These MOSFETs are AEC-Q101 qualified and PPAP capable for automotive applications. These devices are suitable for power tools, battery-operated vacuums, unmanned aerial vehicles (UAVs)/drones, material handling, battery management systems (BMS)/storage, and home automation.