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FDMS4435BZ

Name: onsemi FDMS4435BZ
Brand: onsemi
SKU: 512-FDMS4435BZ
Price: 1.05 EUR
Availability: InStock

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See Product Specifications

Mouser No:

512-FDMS4435BZ

Mfr. No:

FDMS4435BZ

Mfr.:

onsemi

Description:

MOSFETs P-Channel PowerTrench MOSFET

Datasheet:

FDMS4435BZ Datasheet

ECAD Model:

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More Information

Learn more about onsemi FDMS4435BZ

In Stock: 10.400

Stock:: 10.400 Can Dispatch Immediately

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Factory Lead Time:: 25 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,05 €	1,05 €
	0,633 €	6,33 €
	0,433 €	43,30 €
	0,337 €	168,50 €
Full Reel (Order in multiples of 3000)
	0,318 €	954,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	Power-56-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	9 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	47 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	39 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Forward Transconductance - Min:	25 S
Product Type:	MOSFETs
Series:	FDMS4435BZ
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Unit Weight:	74 mg

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Datasheet

FDMS4435BZ Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
ECCN:: EAR99

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and R_DS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low R_DS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More

ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low R_DS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering

PowerTrench® MOSFETs

onsemi PowerTrench^® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low R_DS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.