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CAB006M12GM3T

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Mouser No:

941-CAB006M12GM3T

Mfr. No:

CAB006M12GM3T

Mfr.:

Wolfspeed

Description:

Discrete Semiconductor Modules SiC, Module, 6mohm, 1200V, 48 mm, GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM

Datasheet:

CAB006M12GM3T Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	Discrete Semiconductor Modules
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Product:	SiC Modules
Type:	Half Bridge
Technology:	SiC
Vf - Forward Voltage:	4.9 V
Vgs - Gate-Source Voltage:	- 8 V, + 15 V
Mounting Style:	Screw Mount
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Series:	WolfPACK
Packaging:	Tray
Brand:	Wolfspeed
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Id - Continuous Drain Current:	200 A
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	6 mOhms
Factory Pack Quantity:	18
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	3.6 V

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Datasheet

CAB006M12GM3T Datasheet

PCN

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

WolfPACK™ SiC-Based Power Modules

Wolfspeed WolfPACK™ SiC-Based Power Modules are simple and designed to provide clean, reliable power for energy conversion systems. These modules offer incredibly low losses in a package that lends itself extremely well to automation and manufacturing at scale. These Wolfspeed WolfPACK modules come in SiC MOSFET half-bridge and SiC MOSFET six-pack configurations with a variety of mΩ options. The devices feature a compact footprint and can be used to design a streamlined, higher power density system. They can help system designers enable a more compact solution than is achievable with either multiple discrete devices or with larger, high-ampacity modules.