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VS-FC420SA15

Name: Vishay VS-FC420SA15
Brand: Vishay Semiconductors
SKU: 78-VS-FC420SA15
Price: 26.09 EUR
Availability: InStock

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Mouser No:

78-VS-FC420SA15

Mfr. No:

VS-FC420SA15

Mfr.:

Vishay Semiconductors

Description:

MOSFET Modules 150V, 1.93mOhm, 400A SOT-227 Pwr Mod

Datasheet:

VS-FC420SA15 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors VS-FC420SA15

In Stock: 371

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	26,09 €	26,09 €
	20,88 €	208,80 €
	17,04 €	1.704,00 €
2.500	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	400 A
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	909 W
Packaging:	Tube
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	142 ns
Product Type:	MOSFET Modules
Rise Time:	285 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	ThunderFET
Type:	MOSFET
Typical Turn-Off Delay Time:	120 ns
Typical Turn-On Delay Time:	139 ns
Vf - Forward Voltage:	950 mV
Vr - Reverse Voltage:	150 V
Unit Weight:	30 g

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Filter Document:

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

High Voltage MOSFET Modules

Vishay High Voltage MOSFET Modules manage very high currents in low voltage power converters. These MOSFET modules include single switch power MOSFETs which feature ThunderFET^® and TrenchFET^® technologies. The high voltage MOSFET modules also include power MOSFETs which offer a fully isolated package, low on-resistance, dynamic dV/dt rating, and low drain to case capacitance. Vishay High Voltage MOSFET Modules provide an excellent combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.