It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SIRC18DP-T1-GE3

Name: Vishay SIRC18DP-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SIRC18DP-T1-GE3
Price: 1.98 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SIRC18DP-T1-GE3

Mfr. No:

SIRC18DP-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 30V Vds 20V Vgs PowerPAK SO-8

Datasheet:

SIRC18DP-T1-GE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay Semiconductors SIRC18DP-T1-GE3

In Stock: 42.987

Stock:: 42.987 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,98 €	1,98 €
	1,27 €	12,70 €
	0,869 €	86,90 €
	0,691 €	345,50 €
	0,67 €	670,00 €
Full Reel (Order in multiples of 3000)
	0,635 €	1.905,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	850 uOhms
Vgs - Gate-Source Voltage:	- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	111 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	54.3 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	12 ns
Forward Transconductance - Min:	70 S
Product Type:	MOSFETs
Rise Time:	21 ns
Series:	SIR
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	16 ns
Unit Weight:	506,600 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SIRC18DP-T1-GE3 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 8541100101
ECCN:: EAR99

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.