TRS20H120H,S1Q

Toshiba
757-TRS20H120HS1Q
TRS20H120H,S1Q

Mfr.:

Description:
SiC Schottky Diodes RECT 1.2KV 61A RDL SIC SKY

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Toshiba TRS20H120H,S1Q

In Stock: 114

Stock:
114 Can Dispatch Immediately
Factory Lead Time:
4 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
9,37 € 9,37 €
8,00 € 80,00 €
7,90 € 948,00 €
7,73 € 3.942,30 €
25.020 Quote

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-247-2
Single
61 A
1.2 kV
1.27 V
1.08 kA
2 uA
- 55 C
+ 175 C
Tube
Brand: Toshiba
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Pd - Power Dissipation: 312 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 30
Subcategory: Diodes & Rectifiers
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Attributes selected: 0

Datasheet

TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99

SiC Schottky Barrier Diodes

Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.

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