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TK3A65DA(STA4,QM)

Name: Toshiba TK3A65DA(STA4,QM)
Brand: Toshiba
SKU: 757-TK3A65DASTA4QM
Price: 1.81 EUR
Availability: InStock

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Mouser No:

757-TK3A65DASTA4QM

Mfr. No:

TK3A65DA(STA4,QM)

Mfr.:

Toshiba

Description:

MOSFETs N-Ch MOS 2.5A 650V 35W 490pF 2.51

Datasheet:

TK3A65DA(STA4,QM) Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TK3A65DA(STA4,QM)

In Stock: 240

Stock:: 240

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On Order:: 240
Factory Lead Time:: 54

Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,81 €	1,81 €
	1,01 €	10,10 €
	0,802 €	80,20 €
	0,593 €	296,50 €
	0,541 €	541,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220FP-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	2.5 A
Rds On - Drain-Source Resistance:	2.51 Ohms
Pd - Power Dissipation:	35 W
Tradename:	MOSVII
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	JP
Country of Origin:	MY
Product Type:	MOSFETs
Series:	TK3A65DA
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	2 g

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Datasheet

TK3A65DA(STA4,QM) Datasheet (PDF)

Application Notes

Product Catalogs

TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 8542399901
ECCN:: EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and R_DS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.