GT40WR21,Q

Toshiba
757-GT40WR21Q
GT40WR21,Q

Mfr.:

Description:
IGBTs DISCRETE IGBT TRANSISTOR TO-3PN(OS) V=1800 IC=40A

Datasheet:
ECAD Model:
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In Stock: 90

Stock:
90 Can Dispatch Immediately
Factory Lead Time:
5 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
9,72 € 9,72 €
6,75 € 67,50 €
6,07 € 607,00 €
5,52 € 2.760,00 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: IGBTs
RoHS:  
Si
TO-3PN-3
Through Hole
Single
1.8 kV
2.9 V
- 25 V, 25 V
40 A
375 W
- 55 C
+ 175 C
GT40WR21
Tray
Brand: Toshiba
Continuous Collector Current Ic Max: 80 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: JP
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 100
Subcategory: IGBTs
Products found:
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Attributes selected: 0

Datasheet

Application Notes

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Test/Quality Data

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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

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