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LMG3411R050RWHR

Name: Texas Instruments LMG3411R050RWHR
Brand: Texas Instruments
SKU: 595-LMG3411R050RWHR
Price: 7.79 EUR
Availability: OutOfStock

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Mouser No:

595-LMG3411R050RWHR

Mfr. No:

LMG3411R050RWHR

Mfr.:

Texas Instruments

Description:

Gate Drivers 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHT

Datasheet:

LMG3411R050RWHR Datasheet

ECAD Model:

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More Information

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Factory Lead Time:: 12 Weeks Estimated factory production time.

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Minimum: 2000 Multiples: 2000

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Ext. Price:

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Est. Tariff:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 2000)
	7,79 €	15.580,00 €

Alternative Packaging

Mfr. Part No.:

LMG3411R050RWHT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

26,78 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

LMG3411R050RWHT

Description:

Gate Drivers 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHR

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Product:	MOSFET Gate Drivers
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	VQFN-32
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	12 A
Supply Voltage - Min:	9.5 V
Supply Voltage - Max:	18 V
Rise Time:	2.9 ns
Fall Time:	26 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3411R050
Packaging:	Reel
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Maximum Turn-Off Delay Time:	8.9 ns
Maximum Turn-On Delay Time:	5.2 ns
Moisture Sensitive:	Yes
Operating Supply Current:	23 mA
Output Voltage:	5 V
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	57 mOhms
Factory Pack Quantity:	2000
Subcategory:	PMIC - Power Management ICs
Technology:	GaN
Tradename:	GaN

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Datasheet

LMG3411R050RWHR Datasheet

Application Notes

PCN

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USHTS:: 8542390090
ECCN:: EAR99

LMG341xR050 GaN Power Stage

Texas Instruments LMG341xR050 GaN Power Stage with integrated driver and protection enables designers to achieve new power density levels and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem pole PFC.