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CSD17309Q3

Name: Texas Instruments CSD17309Q3
Brand: Texas Instruments
SKU: 595-CSD17309Q3
Price: 1.43 EUR
Availability: InStock

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Mouser No:

595-CSD17309Q3

Mfr. No:

CSD17309Q3

Mfr.:

Texas Instruments

Description:

MOSFETs 30V N Channel NexFET Power MOSFET

Datasheet:

CSD17309Q3 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD17309Q3

In Stock: 5.087

Stock:: 5.087 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,43 €	1,43 €
	0,912 €	9,12 €
	0,606 €	60,60 €
Full Reel (Order in multiples of 2500)
	0,606 €	1.515,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	5.4 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	7.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.8 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	PH
Country of Diffusion:	TW
Country of Origin:	PH
Development Kit:	DLPDLCR4710EVM-G2, TPS65982-EVM, TPS65983EVM
Fall Time:	3.6 ns
Forward Transconductance - Min:	67 S
Product Type:	MOSFETs
Rise Time:	9.9 ns
Series:	CSD17309Q3
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	13.2 ns
Typical Turn-On Delay Time:	6.1 ns
Unit Weight:	44,500 mg

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Datasheet

CSD17309Q3 Datasheet

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Power Management Guide 2018 (Rev. R)

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CSD17309Q3 TINA-TI Reference Design

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

CSD17309Q3 NexFET™ Power MOSFET

Texas Instruments CSD17309Q3 30V N-Channel NexFET™ Power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5V gate drive applications. The Texas Instruments CSD17309Q3 N-Channel NexFET MOSFET features ultra-low on-resistance and low thermal resistance. This MOSFET is ideal for notebook point of load and point-of-load synchronous buck in networking, telecom, and computing systems applications.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.