GP2T080A120J

SemiQ
148-GP2T080A120J
GP2T080A120J

Mfr.:

Description:
SiC MOSFETs 1200V, 80mOhm, TO-263-7L MOSFET

ECAD Model:
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In Stock: 6

Stock:
6 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,48 € 6,48 €
4,58 € 45,80 €
3,80 € 380,00 €
3,39 € 1.695,00 €
3,17 € 3.170,00 €

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
35 A
77 mOhms
- 10 V, + 25 V
4 V
53 nC
- 55 C
+ 175 C
188 W
Enhancement
Brand: SemiQ
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 10 ns
Forward Transconductance - Min: 8 S
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 3 ns
Series: GP2T020A120
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 10 ns
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GP2T080A120H 1200V SiC MOSFET

SemiQ GP2T080A120H 1200V SiC MOSFET delivers lower capacitance and higher system efficiency. The GP2T080A120H features high-speed switching, a driver source pin for gate driving, and a reliable body diode. The GP2T080A120H 1200V SiC MOSFET parts are tested to above 1400V and avalanche tested to 200mJ. Furthermore, the GP2T080A120H s easy to parallel and offers a lower Qg. The device is ideal for solar inverters, EV charging stations, induction heating and welding, and motor drivers.