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STP4N150

Name: STMicroelectronics STP4N150
Brand: STMicroelectronics
SKU: 511-STP4N150
Price: 4.82 EUR
Availability: InStock

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Mouser No:

511-STP4N150

Mfr. No:

STP4N150

Mfr.:

STMicroelectronics

Description:

MOSFETs PowerMESH MOSFET

Complete Your Design

Datasheet:

STP4N150 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STP4N150

In Stock: 617

Stock:: 617 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,82 €	4,82 €
	2,54 €	25,40 €
	2,33 €	233,00 €
	2,23 €	1.115,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.5 kV
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	5 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	50 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	160 W
Channel Mode:	Enhancement
Tradename:	PowerMESH
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	45 ns
Forward Transconductance - Min:	3.5 S
Product Type:	MOSFETs
Rise Time:	30 ns
Series:	STP4N150
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	35 ns
Unit Weight:	2 g

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Datasheet

STP4N150 Datasheet (PDF)

PCN

TARIC:: 8541210000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412101
ECCN:: EAR99

N-Channel PowerMESH Power MOSFETs

STMicroelectronics N-Channel PowerMESH Power MOSFETs are designed with the STMicroelectronics consolidated strip-layout based MESH OVERLAY™ process. This process results in an advanced family of high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the proprietary edge termination structure, gives the lowest R_DS(on) per area, unrivaled gate charge, and switching characteristics.