STGYA120M65DF2AG

STMicroelectronics
511-STGYA120M65DF2AG
STGYA120M65DF2AG

Mfr.:

Description:
IGBTs Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss in
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Datasheet:
ECAD Model:
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In Stock: 515

Stock:
515 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
7,59 € 7,59 €
4,70 € 47,00 €
3,84 € 384,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
Max247-3
Through Hole
Single
650 V
1.65 V
- 20 V, 20 V
160 A
625 W
- 55 C
+ 175 C
STGYA120M65DF2AG
AEC-Q101
Tube
Brand: STMicroelectronics
Country of Assembly: CN
Country of Diffusion: Not Available
Country of Origin: CN
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 4,430 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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