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SCTW90N65G2V

Name: STMicroelectronics SCTW90N65G2V
Brand: STMicroelectronics
SKU: 511-SCTW90N65G2V
Price: 21.68 EUR
Availability: InStock

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Mouser No:

511-SCTW90N65G2V

Mfr. No:

SCTW90N65G2V

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24

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Datasheet:

SCTW90N65G2V Datasheet (PDF)

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In Stock: 45

Stock:: 45 Can Dispatch Immediately

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Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 645 will be subject to minimum order requirements.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	21,68 €	21,68 €
	19,70 €	197,00 €
	17,40 €	1.740,00 €
	17,39 €	10.434,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	90 A
Rds On - Drain-Source Resistance:	25 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Qg - Gate Charge:	157 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	390 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	16 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	38 ns
Series:	SCTW90N
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	58 ns
Typical Turn-On Delay Time:	26 ns
Unit Weight:	4,500 g

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Datasheet

SCTW90N65G2V Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

650V 3rd Gen SiC MOSFETs

STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (R_DS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.