RM2312-T

Name: Rectron RM2312-T
Brand: Rectron
SKU: 583-RM2312-T
Price: 0.6 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

583-RM2312-T

Mfr. No:

RM2312-T

Mfr.:

Rectron

Description:

MOSFETs

Datasheet:

RM2312-T Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Rectron RM2312-T

In Stock: 2.394

Stock:: 2.394 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,605 €	0,61 €
	0,413 €	4,13 €
	0,261 €	26,10 €
	0,164 €	82,00 €
	0,146 €	146,00 €
Full Reel (Order in multiples of 3000)
	0,123 €	369,00 €
	0,107 €	642,00 €
	0,095 €	855,00 €
	0,085 €	2.040,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Rectron
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	4.5 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	500 mV
Qg - Gate Charge:	10 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Rectron
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	28 ns
Forward Transconductance - Min:	10 S
Product Type:	MOSFETs
Rise Time:	18 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	20 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

RM2312-T Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

RM2312 N-Channel Enhancement Mode Power MOSFET

Rectron RM2312 N-Channel Enhancement Mode Power MOSFET uses advanced trench technology to provide excellent R_DS(ON). The MOSFET features a low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as battery protection or in other switching applications.

RM2312-T

Mfr.: Rectron

Description: MOSFETs

In Stock: 2.394

Pricing (EUR)

Specifications

Documents (1)

Datasheet

Product Compliance

More Information

RM2312 N-Channel Enhancement Mode Power MOSFET

Customers Also Purchased

FEATURED PRODUCTS RECTRON

QuickView

An unexpected error has occurred.

Mfr.:

Rectron

Description:

MOSFETs

FEATURED PRODUCTS

RECTRON