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SCT3120AW7TL

Name: ROHM Semiconductor SCT3120AW7TL
Brand: ROHM Semiconductor
SKU: 755-SCT3120AW7TL
Price: 8.67 EUR
Availability: InStock

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Mouser No:

755-SCT3120AW7TL

Mfr. No:

SCT3120AW7TL

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs Transistor SiC MOSFET 650V 120m 3rd Gen TO-263-7L

Datasheet:

SCT3120AW7TL Datasheet

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In Stock: 2.763

Stock:: 2.763 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2763 will be subject to minimum order requirements.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	8,67 €	8,67 €
	6,37 €	63,70 €
	5,91 €	591,00 €
Full Reel (Order in multiples of 1000)
	5,84 €	5.840,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	21 A
Rds On - Drain-Source Resistance:	156 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	38 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	100 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	11 ns
Forward Transconductance - Min:	2.7 S
Packaging:	Reel
Packaging:	Cut Tape
Product:	MOSFET's
Product Type:	SiC MOSFETS
Rise Time:	14 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	6 ns
Part # Aliases:	SCT3120AW7
Unit Weight:	1,600 g

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Datasheet

SCT3120AW7TL Datasheet

Specification Sheets

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SCTxxxAW7/SCT3xxxKW7 SiC Trench-Type 7-Pin MOSFETs

ROHM Semiconductor SCT3xxxAW7/SCT3xxxKW7 SiC Trench-Type 7-Pin MOSFETs utilize a proprietary trench gate structure to reduce ON resistance by 50% and input capacitance by 35% over planar-type SiC MOSFETs. The MOSFETs include an additional pin that separates the driver and power source pins, eliminating the inductance component's effects in reducing Vgs, ensuring faster switching speeds. The ROHM Semiconductor Trench-Type MOSFETs feature a high voltage resistance, low ON resistance, fast switching speed, simple to drive, and easy to parallel.