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RGS80TSX2HRC11

Name: ROHM Semiconductor RGS80TSX2HRC11
Brand: ROHM Semiconductor
SKU: 755-RGS80TSX2HRC11
Price: 10.02 EUR
Availability: InStock

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Mouser No:

755-RGS80TSX2HRC11

Mfr. No:

RGS80TSX2HRC11

Mfr.:

ROHM Semiconductor

Description:

IGBTs 10s Short-Circuit Tolerance, 1200V 40A, TO-247N, Field Stop Trench IGBT for Automotive

Datasheet:

RGS80TSX2HRC11 Datasheet (PDF)

ECAD Model:

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In Stock: 334

Stock:: 334 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	10,02 €	10,02 €
	6,11 €	61,10 €
	5,66 €	566,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247N-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.1 V
Maximum Gate Emitter Voltage:	30 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	555 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	ROHM Semiconductor
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Gate-Emitter Leakage Current:	500 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	450
Subcategory:	IGBTs
Part # Aliases:	RGS80TSX2HR

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Datasheet

RGS80TSX2HRC11 Datasheet (PDF)

PCN

Product Change Notification 2024-10-15 (PDF)

Specification Sheets

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101-rated automotive IGBTs available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that reduces the size and improves the efficiency of applications. The RGS IGBTs utilize original trench-gate and thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (V_CE(sat)) with reduced switching losses. ROHM Semiconductor RGS IGBTs provide increased energy savings in various high voltage and high current applications.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.