BSM080D12P2C008

ROHM Semiconductor
755-BSM080D12P2C008
BSM080D12P2C008

Mfr.:

Description:
Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
27 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
285,08 € 285,08 €

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: Discrete Semiconductor Modules
RoHS:  
SiC MOSFET-SiC SBD Modules
Half Bridge
SiC
1.2 kV
- 6 V, + 22 V
Screw Mount
Module
- 40 C
+ 150 C
BSMx
Tray
Brand: ROHM Semiconductor
Configuration: Half Bridge
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: JP
Fall Time: 40 ns
Id - Continuous Drain Current: 80 A
Pd - Power Dissipation: 600 W
Product Type: Discrete Semiconductor Modules
Rise Time: 30 ns
Factory Pack Quantity: 12
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 80 ns
Typical Turn-On Delay Time: 20 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.6 V
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8504409100
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

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