BM63767S-VC

ROHM Semiconductor
755-BM63767S-VC
BM63767S-VC

Mfr.:

Description:
Intelligent Power Modules - IPMs 600V IGBT I. Pwr Mod Staggered type

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
ECAD Model:
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Learn more about ROHM Semiconductor BM63767S-VC

In Stock: 54

Stock:
54 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 54 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
24,36 € 24,36 €
19,13 € 191,30 €
120 Quote

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: Intelligent Power Modules - IPMs
RoHS:  
Brand: ROHM Semiconductor
Collector- Emitter Voltage VCEO Max: 600 V
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Maximum Operating Temperature: + 100 C
Minimum Operating Temperature: - 25 C
Mounting Style: Through Hole
Package/Case: HSDIP-25VC
Packaging: Tube
Pd - Power Dissipation: 59 W
Product Type: Intelligent Power Modules - IPMs
Factory Pack Quantity: 60
Subcategory: Discrete and Power Modules
Technology: Si
Type: 3-Phase
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Attributes selected: 0

CNHTS:
8542390000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399901
ECCN:
EAR99

IGBT Intelligent Power Modules

ROHM Semiconductor IGBT Intelligent Power Modules (IPMs) Insulated-Gate Bipolar Transistors (IGBT) optimized for both high-speed and low-speed switching drives. These IPMs are comprised of gate drivers, bootstrap diodes, IGBTs, and flywheel diodes. The modules offer a collector current ranging from 3A to 80A and voltage ranging from 600V to 1800V. The ROHM Semiconductor IGBT IPMs feature 3-phase DC/AC inverter, low side IGBT open-emitter, high side IGBT gate driver, low side IGBT gate driver, and fault signal. Typical applications include low-speed and high-speed switching drives.

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