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QPD1010

Name: Qorvo QPD1010
Brand: Qorvo
SKU: 772-QPD1010
Price: 76.55 EUR
Availability: InStock

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Mouser No:

772-QPD1010

Mfr. No:

QPD1010

Mfr.:

Qorvo

Description:

GaN FETs DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN

Datasheet:

QPD1010 Datasheet

ECAD Model:

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In Stock: 52

Stock:: 52 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	76,55 €	76,55 €
	40,69 €	1.017,25 €
	39,17 €	3.917,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	QFN-16
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Id - Continuous Drain Current:	400 mA
Vgs th - Gate-Source Threshold Voltage:	- 2.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	13.5 W
Brand:	Qorvo
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Development Kit:	QPD1010-EVB1
Gain:	24.7 dB
Maximum Operating Frequency:	4 GHz
Minimum Operating Frequency:	0 Hz
Moisture Sensitive:	Yes
Output Power:	11 W
Packaging:	Waffle
Product Type:	GaN FETs
Series:	QPD1010
Factory Pack Quantity:	50
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Vgs - Gate-Source Breakdown Voltage:	145 V
Part # Aliases:	1132873
Unit Weight:	2,300 g

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Datasheet

QPD1010 Datasheet

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TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8542390000
USHTS:: 8542390090
JPHTS:: 854239099
MXHTS:: 8542399901
ECCN:: EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

QPD1009 & QPD1010 GaN RF Transistors

Qorvo QPD1009 and QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and are constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization is potentially cost effective in terms of fewer amplifier line-ups and lower thermal management costs.