QPD1008L

Qorvo
772-QPD1008L
QPD1008L

Mfr.:

Description:
GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN

Datasheet:
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Learn more about Qorvo QPD1008L

In Stock: 45

Stock:
45 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
402,86 € 402,86 €
300,57 € 7.514,25 €

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
Screw Mount
NI-360
N-Channel
50 V
4 A
- 2.8 V
- 40 C
+ 85 C
127 W
Brand: Qorvo
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Development Kit: QPD1008LPCB401
Gain: 17.5 dB
Maximum Operating Frequency: 3.2 GHz
Minimum Operating Frequency: 0 Hz
Moisture Sensitive: Yes
Output Power: 162 W
Packaging: Tray
Product Type: GaN FETs
Series: QPD1008L
Factory Pack Quantity: 25
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Vgs - Gate-Source Breakdown Voltage: 145 V
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Attributes selected: 0

Datasheet

PCN

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

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