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PJD16P06A_L2_00001

Name: Panjit PJD16P06A_L2_00001
Brand: Panjit
SKU: 241-PJD16P06AL200001
Price: 0.84 EUR
Availability: InStock

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Mouser No:

241-PJD16P06AL200001

Mfr. No:

PJD16P06A_L2_00001

Mfr.:

Panjit

Description:

MOSFETs 60V P-Channel Enhancement Mode MOSFET

Datasheet:

PJD16P06A_L2_00001 Datasheet (PDF)

ECAD Model:

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In Stock: 14.662

Stock:: 14.662 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,843 €	0,84 €
	0,524 €	5,24 €
	0,341 €	34,10 €
	0,263 €	131,50 €
	0,237 €	237,00 €
Full Reel (Order in multiples of 3000)
	0,207 €	621,00 €
	0,191 €	1.146,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252AA-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	16 A
Rds On - Drain-Source Resistance:	65 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Panjit
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	16 ns
Product Type:	MOSFETs
Rise Time:	42 ns
Series:	NFET-60SMP
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	13 ns
Unit Weight:	297 mg

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Filter Document:

Datasheet

PJD16P06A_L2_00001 Datasheet (PDF)

Application Notes

Understanding Medium Voltage and Super Junction MOSFET Datasheet Parameters (PDF)

PCN

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

60V P-Channel Enhancement Mode MOSFETs

PANJIT 60V P-Channel Enhancement Mode MOSFETs are designed with advanced trench technology to minimize R_DS(ON) while maximizing avalanche ruggedness and space usage while maintaining superior switching performance. The devices feature a 200mA to 16A continuous drain current, a 1.1nC to 22nC gate charge, and 300mW to 50W power dissipation. The MOSFETs include advanced Trench Process technology and are optimized for use as relay drivers and line drivers. With AEC-Q101 qualification options and a high junction temperature of 175°C, the MOSFETs are ideal for automotive design engineers to simplify circuitry while optimizing performances.