PCDF0465G1_T0_00601

Panjit
241-PCDF0465G1T00601
PCDF0465G1_T0_00601

Mfr.:

Description:
SiC Schottky Diodes 650V/4A Through Hole Silicon Carbide Schottky Barrier Diode

Datasheet:
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Learn more about Panjit PCDF0465G1_T0_00601

In Stock: 2.000

Stock:
2.000 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,12 € 3,12 €
1,43 € 14,30 €

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
ITO-220AC -2
Single
4 A
650 V
1.5 V
360 A
2.5 uA
- 55 C
+ 175 C
Tube
Brand: Panjit
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Pd - Power Dissipation: 53.6 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
Unit Weight: 1,562 g
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Attributes selected: 0

Datasheet

TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99

SiC Schottky Barrier Diodes

PANJIT SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, and temperature-independent switching behavior. The devices have a high surge current capability, and excellent thermal performance. Silicon carbide technology provides lower conduction losses. The diodes can deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.

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