GANB012-040CBAZ

Nexperia
771-GANB012-040CBAZ
GANB012-040CBAZ

Mfr.:

Description:
GaN FETs GANB012-040CBA/SOT8088/WLCSP12

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 2.424

Stock:
2.424
Can Dispatch Immediately
On Order:
2.500
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,894 € 0,89 €
0,581 € 5,81 €
0,575 € 115,00 €
0,551 € 275,50 €
0,531 € 531,00 €
Full Reel (Order in multiples of 2500)
0,416 € 1.040,00 €
0,391 € 1.955,00 €

Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: GaN FETs
RoHS:  
SMD/SMT
WLCSP-12
P-Channel
1 Channel
40 V
10 A
12 mOhms
6 V
2.4 V
7.2 nC
- 40 C
+ 125 C
11 W
Enhancement
Brand: Nexperia
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Maximum Drain Gate Voltage: 40 V
Packaging: Reel
Packaging: Cut Tape
Product: GaN FETs
Product Type: GaN FETs
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Transistor Type: 1 P-Channel
Part # Aliases: 934667632336
Products found:
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GANB1R2-040QBA & GANB012-040CBA GaN HEMTs

Nexperia GANB1R2-040QBA and GANB012-040CBA GaN HEMTs are 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).