GAN080-650EBEZ

Nexperia
771-GAN080-650EBEZ
GAN080-650EBEZ

Mfr.:

Description:
GaN FETs SOT8074 650V 29A FET

Datasheet:
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Learn more about Nexperia GAN080-650EBEZ

In Stock: 14

Stock:
14 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
6,65 € 6,65 €
4,52 € 45,20 €
3,45 € 345,00 €
Full Reel (Order in multiples of 2500)
2,93 € 7.325,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: GaN FETs
RoHS:  
SMD/SMT
DFN-8080-8
N-Channel
1 Channel
650 V
29 A
80 mOhms
- 7 V, + 7 V
2.5 V
6.2 nC
- 55 C
+ 150 C
188 W
Enhancement
Brand: Nexperia
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 4 ns
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: GaN FETs
Rise Time: 4 ns
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Typical Turn-Off Delay Time: 5 ns
Typical Turn-On Delay Time: 3 ns
Part # Aliases: 934665901332
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Attributes selected: 0

Datasheet

Application Notes

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

eMode GaN FETs

Nexperia eMode GaN FETs come in a voltage range from 100V to 650V with superior switching performance. These GaN FETs offer fast transition capabilities through their low QC and QOSS values, resulting in excellent power efficiency.

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