MC34GD3000EP

NXP Semiconductors
841-MC34GD3000EP
MC34GD3000EP

Mfr.:

Description:
Motor/Motion/Ignition Controllers & Drivers Brushless DC Motor Gate Driver, 3-Phase, 5-60V, 1A, QFN 56

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In Stock: 3.215

Stock:
3.215 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,48 € 4,48 €
3,42 € 34,20 €
3,16 € 79,00 €
2,86 € 286,00 €
2,85 € 1.482,00 €
5.200 Quote

Product Attribute Attribute Value Select Attribute
NXP
Product Category: Motor/Motion/Ignition Controllers & Drivers
RoHS:  
Brushless DC Motor Controllers
3 Phase
1 A to 2.5 A
11 mA
- 40 C
+ 150 C
SMD/SMT
HVQFN-56
Tray
Brand: NXP Semiconductors
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Moisture Sensitive: Yes
Output Voltage: 4.5 V to 5.5 V
Product Type: Motor / Motion / Ignition Controllers & Drivers
Series: GD3000
Factory Pack Quantity: 260
Subcategory: PMIC - Power Management ICs
Supply Voltage - Max: 60 V
Supply Voltage - Min: 6 V
Part # Aliases: 935313159557
Unit Weight: 0,001 mg
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Attributes selected: 0

TARIC:
8542399000
CNHTS:
8542391090
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399901
ECCN:
EAR99

GD3000 3-Phase Brushless Motor Pre-Drivers

NXP Semiconductors GD3000 3-Phase Brushless Motor Pre-Drivers are highly efficient gate driver ICs for three-phase motor drive applications. The NXP Semiconductors GD3000 features three half-bridge drivers, each capable of driving two N-channel MOSFETs. With a peak current capability ranging from 1A to 2.5A, this pre-driver operates on a single power supply with a broad range from 6V to 60V and incorporates 75V transient protection. Utilizing a bootstrap gate driver architecture with trickle charge circuitry, the GD3000 supports a 100% duty cycle. Additionally, it employs programmable cross-talk protection to prevent current flow during high-side or low-side MOSFET switching. Integrated VDS sensing of both MOSFETs safeguards the external power stage against over-current conditions. Including a current shunt amplifier enables accurate current measurement for phase error detection.