935156722510

Murata Electronics
81-935156722510
935156722510

Mfr.:

Description:
Silicon RF Capacitors / Thin Film

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 1000   Multiples: 1000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 1000)
1,04 € 1.040,00 €
0,98 € 9.800,00 €

Similar Products

Product Attribute Attribute Value Select Attribute
Murata
Product Category: Silicon RF Capacitors / Thin Film
RoHS:  
ULSC
Reel
Brand: Murata Electronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: Not Available
Product Type: Silicon RF Capacitors / Thin Film
Factory Pack Quantity: 1000
Subcategory: Capacitors
Part # Aliases: 935156722510-T3S
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Attributes selected: 0

Datasheet

TARIC:
8532290000

Ultra-Broadband Silicon Capacitors

Murata Ultra-Broadband Silicon Capacitors are ideal for optical communication systems (ROSA/TOSA, SONET, and all optoelectronics) as well as high-speed data systems or products. These deep trench silicon capacitors are designed for DC blocking, feedback, coupling, and bypass grounding applications. The modules offer low insertion loss, low reflection, and high phase stability from 16kHz to 60GHz for the UBSC/UBEC series and up to 20GHz for the ULSC series as well as high rejection up to 26GHz for the UWSC devices. Murata Ultra-Broadband Silicon Capacitors have been developed with a semiconductor MOS process.

BBSC/UBSC/ULSC Ultra-Broadband SMT Si Capacitors

Murata BBSC/UBSC/ULSC Ultra-Broadband SMT Si Capacitors target optical communication systems (ROSA/TOSA, SONET, and all optoelectronics) as well as high-speed data systems or products. These capacitors are designed for DC blocking, coupling, and bypass grounding applications. The silicon capacitors offer low insertion loss, low reflection and high phase stability from 16kHz up to 67GHz for the UBSC, up to 40GHz for the BBSC, and up to 20GHz for the ULSC. These deep trench silicon capacitors have been developed using a semiconductor MOS process allowing high reliability and capacitance stability over voltage (0.1%/V) and temperature (60ppm/K).

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