2N5116

InterFET
106-2N5116
2N5116

Mfr.:

Description:
JFETs JFET P-Channel 30V Low Noise

Datasheet:
ECAD Model:
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In Stock: 281

Stock:
281 Can Dispatch Immediately
Factory Lead Time:
9 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
16,23 € 16,23 €
12,56 € 125,60 €
10,85 € 1.085,00 €
5.000 Quote

Product Attribute Attribute Value Select Attribute
InterFET
Product Category: JFETs
RoHS:  
Through Hole
2N51
Bulk
Brand: InterFET
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Drain-Source Current at Vgs=0: - 25 mA
Gate-Source Cut-off Voltage: 4 V
Id - Continuous Drain Current: - 15 mA
Package/Case: TO-18-3
Pd - Power Dissipation: 500 mW (1/2 W)
Product Type: JFETs
Rds On - Drain-Source Resistance: 150 Ohms
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: Si
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 15 V
Vgs - Gate-Source Breakdown Voltage: 30 V
Products found:
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Attributes selected: 0

Datasheet

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TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
KRHTS:
8541219000
MXHTS:
8541210100
ECCN:
EAR99

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