S25FL256SAGNFV000

Infineon Technologies
727-S25FL256SAGNF000
S25FL256SAGNFV000

Mfr.:

Description:
NOR Flash STD SPI

Datasheet:
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Learn more about Infineon Technologies S25FL256SAGNFV000

In Stock: 2.383

Stock:
2.383 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,82 € 4,82 €
4,50 € 45,00 €
4,36 € 109,00 €
4,26 € 213,00 €
3,98 € 398,00 €
3,88 € 970,00 €
3,83 € 1.915,00 €
3,63 € 3.630,00 €

Alternative Packaging

Mfr. Part No.:
S25FL256SAGNFV001
Packaging:
Tube
Availability:
In Stock
Price:
4,82 €
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: NOR Flash
RoHS:  
SMD/SMT
WSON-8
S25FL256S
256 Mbit
2.7 V
3.6 V
100 mA
SPI
133 MHz
32 M x 8
8 bit
Synchronous
- 40 C
+ 105 C
Tray
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Moisture Sensitive: Yes
Product Type: NOR Flash
Speed: 133 MHz
Factory Pack Quantity: 1690
Subcategory: Memory & Data Storage
Tradename: MirrorBit
Unit Weight: 2,416 g
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Attributes selected: 0

Datasheet

TARIC:
8542326100
CNHTS:
8542329090
CAHTS:
8542320040
USHTS:
8542320051
JPHTS:
854232039
KRHTS:
8542321090
MXHTS:
8542320201
ECCN:
3A991.b.1.a

S25FL MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25FL128S/S25FL256S MIRRORBIT™ Flash Non-Volatile Memory devices employ MIRRORBIT technology that stores two data bits in each memory array transistor. These Infineon devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. Infineon S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices

Infineon Technologies S25FLxS FL-S NOR Flash Memory Devices are 2.7V to 3.6V or 1.65V to 3.6V VIO Volt Non-volatile Memory. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MIRRORBIT™ technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in more effective programming and erasing than prior generation SPI programs or erased algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.

FL Serial NOR Flash Memory

Infineon Technologies FL Serial NOR Flash Memory offers a reduced pin count while providing optimal read/write performance. This feature makes the FL Serial NOR Flash Memory optimal for automotive, networking, consumer electronics, and industrial applications. An AEC-Q100 qualification and PPAP support are available for automotive customers. The Infineon FL family has four product groups: FL-S, FL-L, FL1-K, and FL-P.

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