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IPP045N10N3GXKSA1

Name: Infineon IPP045N10N3GXKSA1
Brand: Infineon Technologies
SKU: 726-IPP045N10N3GXKSA
Price: 2.61 EUR
Availability: InStock

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See Product Specifications

Mouser No:

726-IPP045N10N3GXKSA

Mfr. No:

IPP045N10N3GXKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 100V 100A TO220-3 OptiMOS 3

Datasheet:

IPP045N10N3GXKSA1 Datasheet (PDF)

ECAD Model:

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In Stock: 5.807

Stock:: 5.807 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,61 €	2,61 €
	1,37 €	13,70 €
	1,24 €	124,00 €
	1,01 €	505,00 €

Alternative Packaging

Mfr. Part No.:

IPP045N10N3 G

Packaging:

Tube

Availability:

In Stock

Price:

2,80 €

Min:

Similar Product

Mfr.:

Infineon Technologies

Mfr. No:

IPP045N10N3 G

Description:

MOSFETs N-Ch 100V 100A TO220-3 OptiMOS 3

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	4.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	88 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	214 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	MY
Country of Origin:	MY
Fall Time:	14 ns
Forward Transconductance - Min:	73 S
Product Type:	MOSFETs
Rise Time:	59 ns
Series:	OptiMOS 3
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	48 ns
Typical Turn-On Delay Time:	27 ns
Part # Aliases:	IPP045N10N3 G SP000680794
Unit Weight:	2 g