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IPD70N10S3-12

Name: Infineon IPD70N10S3-12
Brand: Infineon Technologies
SKU: 726-IPD70N10S312
Price: 2.67 EUR
Availability: InStock

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See Product Specifications

Mouser No:

726-IPD70N10S312

Mfr. No:

IPD70N10S3-12

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 100V 70A DPAK-2 OptiMOS-T

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IPD70N10S3-12 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IPD70N10S3-12

In Stock: 346

Stock:: 346 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,67 €	2,67 €
	1,80 €	18,00 €
	1,30 €	130,00 €
	1,09 €	545,00 €
	1,05 €	1.050,00 €
Full Reel (Order in multiples of 2500)
	1,01 €	2.525,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance:	11.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	51 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	8 ns
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	OptiMOS-T
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	17 ns
Part # Aliases:	SP000427248 IPD7N1S312XT IPD70N10S312ATMA1
Unit Weight:	4 g

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Datasheet

IPD70N10S3-12 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Infineon OptiMOS™ 3

Infineon's OptiMOS™ 3 40V, 60V, and 80V families reduce power losses up to 30% in a given standard TO package. The low switching losses and on-state resistance of the devices enable an increase in power densities by up to 30% and a reduction in part count for a given application by more than 25%, compared to competitive solutions. The OptiMOS™ 3 devices offer best-in-class RDS(on), achieving an RDS(on) as low as 1.6mΩ for 40V products in SuperSO8™ packages, 3.5mΩ for 60V products in D-PAK packages, and 2.5mΩ for 80V products in D2-PAK packages. The MOSFETs are ideal for a variety of power conversion and management applications, including SMPSs, DC/DC converters, and DC motor drives.

75V to 100V N-Channel Automotive MOSFETs

Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications. These modules are available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These Infineon MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C0₂ emission-reducing 48V power subsystem known as Board Net.