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IPD35N10S3L26ATMA2

Name: Infineon IPD35N10S3L26ATMA2
Brand: Infineon Technologies
SKU: 726-IPD35N10S3L26AT2
Price: 2.04 EUR
Availability: InStock

Mouser No:

726-IPD35N10S3L26AT2

Mfr. No:

IPD35N10S3L26ATMA2

Mfr.:

Infineon Technologies

Description:

MOSFETs 100 V, N-Ch, 24 m? max, Automotive MOSFET, DPAK, OptiMOS-T

Datasheet:

IPD35N10S3L26ATMA2 Datasheet (PDF)

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Learn more about Infineon Technologies IPD35N10S3L26ATMA2

In Stock: 2.553

Stock:: 2.553 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,04 €	2,04 €
	1,34 €	13,40 €
	0,869 €	86,90 €
	0,69 €	345,00 €
	0,643 €	643,00 €
Full Reel (Order in multiples of 2500)
	0,593 €	1.482,50 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	35 A
Rds On - Drain-Source Resistance:	24 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	30 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	71 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Country of Assembly:	MY
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	3 ns
Product Type:	MOSFETs
Rise Time:	4 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	6 ns
Part # Aliases:	IPD35N10S3L26ATMA2 SP005549678

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Datasheet

IPD35N10S3L26ATMA2 Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.