IPB65R230CFD7AATMA1

Infineon Technologies
726-IPB65R230CFD7AAT
IPB65R230CFD7AATMA1

Mfr.:

Description:
MOSFETs AUTOMOTIVE_COOLMOS

ECAD Model:
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In Stock: 382

Stock:
382 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
3,17 € 3,17 €
2,06 € 20,60 €
1,58 € 158,00 €
1,37 € 685,00 €
Full Reel (Order in multiples of 1000)
1,15 € 1.150,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
650 V
11 A
230 mOhms
- 20 V, 20 V
4 V
23 nC
- 40 C
+ 150 C
63 W
Enhancement
AEC-Q101
CoolMOS
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: DE
Fall Time: 9 ns
Product Type: MOSFETs
Rise Time: 13 ns
Series: CoolMOS CFD7A
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 80 ns
Typical Turn-On Delay Time: 19 ns
Part # Aliases: IPB65R230CFD7A SP003783094
Unit Weight: 4 g
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.