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IPA50R190CEXKSA2

Name: Infineon IPA50R190CEXKSA2
Brand: Infineon Technologies
SKU: 726-IPA50R190CEXKSA2
Price: 2.18 EUR
Availability: OutOfStock

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Mouser No:

726-IPA50R190CEXKSA2

Mfr. No:

IPA50R190CEXKSA2

Mfr.:

Infineon Technologies

Description:

MOSFETs CONSUMER

Datasheet:

IPA50R190CEXKSA2 Datasheet (PDF)

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Learn more about Infineon Technologies IPA50R190CEXKSA2

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,18 €	2,18 €
	1,08 €	10,80 €
	0,972 €	97,20 €
	0,777 €	388,50 €
	0,748 €	748,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	24.8 A
Rds On - Drain-Source Resistance:	450 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	47.2 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	32 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Fall Time:	7.5 ns
Product Type:	MOSFETs
Rise Time:	8.5 ns
Series:	CoolMOS CE
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	54 ns
Typical Turn-On Delay Time:	9.5 ns
Part # Aliases:	IPA50R190CE SP001364312
Unit Weight:	2 g

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Datasheet

IPA50R190CEXKSA2 Datasheet (PDF)

Application Notes

Models

Other

Packaging:PG-TO220-3-312 | IPA50R190CEXKSA2 (PDF)

Product Catalogs

SPICE Models

Simulation Model CoolMOS™ Power MOSFET PSpice 500V CE (Zip)

Technical Resources

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

CoolMOS™ CE Power MOSFETs

Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost-optimized to meet typical requirements in consumers with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.