IPA032N06N3 G

Infineon Technologies
726-IPA032N06N3G
IPA032N06N3 G

Mfr.:

Description:
MOSFETs N-Ch 60V 84A TO220FP-3 OptiMOS 3

Lifecycle:
NRND:
Not recommended for new designs.
ECAD Model:
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In Stock: 401

Stock:
401 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,35 € 3,35 €
1,97 € 19,70 €
1,63 € 163,00 €
1,27 € 635,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
60 V
84 A
3.2 mOhms
- 20 V, 20 V
3 V
124 nC
- 55 C
+ 175 C
41 W
Enhancement
OptiMOS
Tube
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Fall Time: 20 ns
Forward Transconductance - Min: 135 S
Product Type: MOSFETs
Rise Time: 120 ns
Series: OptiMOS 3
Factory Pack Quantity: 500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 62 ns
Typical Turn-On Delay Time: 35 ns
Part # Aliases: SP000453608 IPA32N6N3GXK IPA032N06N3GXKSA1
Unit Weight: 2 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

CoolMOS™ N-Channel MOSFETs

Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.