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IMY120R018CM2HXKSA1

Name: Infineon IMY120R018CM2HXKSA1
Brand: Infineon Technologies
SKU: 726-IMY120R018CM2HXK
Price: 15.98 EUR
Availability: InStock

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Mouser No:

726-IMY120R018CM2HXK

Mfr. No:

IMY120R018CM2HXKSA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMY120R018CM2HXKSA1 Datasheet (PDF)

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Learn more about Infineon Technologies IMY120R018CM2HXKSA1

In Stock: 240

Stock:: 240 Can Dispatch Immediately

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Factory Lead Time:: 5 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	15,98 €	15,98 €
	13,00 €	130,00 €
	10,84 €	1.084,00 €
	9,66 €	4.636,80 €
	9,03 €	10.836,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	PG-TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	23 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	5.1 V
Qg - Gate Charge:	73 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	356 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	12.8 ns
Forward Transconductance - Min:	28.6 S
Packaging:	Tube
Product:	MOFET
Product Type:	SiC MOSFETS
Rise Time:	14 ns
Factory Pack Quantity:	240
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	Hybrid Discrete
Typical Turn-Off Delay Time:	26.8 ns
Typical Turn-On Delay Time:	14 ns
Part # Aliases:	IMY120R018CM2H SP006124239

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Datasheet

IMY120R018CM2HXKSA1 Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage V_GS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.