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IMBF170R650M1XTMA1

Name: Infineon IMBF170R650M1XTMA1
Brand: Infineon Technologies
SKU: 726-IMBF170R650M1XTM
Price: 5.15 EUR
Availability: OutOfStock

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Mouser No:

726-IMBF170R650M1XTM

Mfr. No:

IMBF170R650M1XTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package

Datasheet:

IMBF170R650M1XTMA1 Datasheet (PDF)

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Factory Lead Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	5,15 €	5,15 €
	3,32 €	33,20 €
	2,34 €	234,00 €
	2,17 €	1.085,00 €
Full Reel (Order in multiples of 1000)
	2,16 €	2.160,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	7.4 A
Rds On - Drain-Source Resistance:	650 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	88 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	22 ns
Forward Transconductance - Min:	0.65 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Rise Time:	16 ns
Series:	CoolSiC 1700V
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	22 ns
Part # Aliases:	IMBF170R650M1 SP002739686
Unit Weight:	1,600 g

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Datasheet

IMBF170R650M1XTMA1 Datasheet (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

CoolSiC™ 1700V SiC Trench MOSFETs

Infineon CoolSiC™ 1700V SiC Trench MOSFETs feature a revolutionary Silicon Carbide material optimized for fly-back topologies. The SiC Trench MOSFETs offer a 12V/0V gate-source voltage compatible with most fly-back controllers.