FF1MR12MM1HB11BPSA1

Infineon Technologies
726-FF1MR12MM1HB11BP
FF1MR12MM1HB11BPSA1

Mfr.:

Description:
MOSFET Modules EconoDUAL 3 CoolSiC MOSFET 1200 V module

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Infineon Technologies FF1MR12MM1HB11BPSA1

In Stock: 24

Stock:
24 Can Dispatch Immediately
Factory Lead Time:
4 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
507,10 € 507,10 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFET Modules
RoHS:  
SiC
Press Fit
2 Channel
1.2 kV
420 A
1.91 mOhms
- 10 V, + 23 V
5.15 V
- 40 C
+ 175 C
20 mW
EconoDUAL 3
Tray
Brand: Infineon Technologies
Configuration: Dual
Country of Assembly: HU
Country of Diffusion: AT
Country of Origin: HU
Fall Time: 77 ns
Height: 20.5 mm
Length: 152 mm
Product: MOSFET Modules
Product Type: MOSFET Modules
Rise Time: 261 ns
Factory Pack Quantity: 10
Subcategory: Discrete and Power Modules
Tradename: CoolSiC
Typical Turn-Off Delay Time: 319 ns
Typical Turn-On Delay Time: 182 ns
Vf - Forward Voltage: 4.14 V
Width: 62.5 mm
Part # Aliases: FF1MR12MM1H_B11 SP006049681
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Attributes selected: 0

Datasheet

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TARIC:
8541210000
CNHTS:
8504409100
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
MXHTS:
8541210100
ECCN:
EAR99

1200V CoolSiC™ Modules

Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.

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