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F48MXTR12C2M2H11BPSA1

Name: Infineon F48MXTR12C2M2H11BPSA1
Brand: Infineon Technologies
SKU: 726-F48MXTR12C2M2H11
Price: 183.68 EUR
Availability: InStock

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Mouser No:

726-F48MXTR12C2M2H11

Mfr. No:

F48MXTR12C2M2H11BPSA1

Mfr.:

Infineon Technologies

Description:

MOSFET Modules EasyPACK 2C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 8 mOhm with NTC temperature sensor and high current PressFIT contact technology

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

F48MXTR12C2M2H11BPSA1 Datasheet (PDF)

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In Stock: 19

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Factory Lead Time:: 2 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	183,68 €	183,68 €
	156,24 €	1.562,40 €
105	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Press Fit
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	95 A
Rds On - Drain-Source Resistance:	16.8 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	20 mW
Series:	EasyPACK C series
Packaging:	Tray
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	27.4 ns
Height:	12 mm
If - Forward Current:	55 A
Length:	57.1 mm
Product:	MOSFET Module
Product Type:	MOSFET Modules
Rise Time:	23 ns
Factory Pack Quantity:	15
Subcategory:	Discrete and Power Modules
Tradename:	CoolSiC
Type:	MOSFET
Typical Turn-Off Delay Time:	52.8 ns
Typical Turn-On Delay Time:	47 ns
Vf - Forward Voltage:	4.35 V
Width:	53 mm

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Datasheet

F48MXTR12C2M2H11BPSA1 Datasheet (PDF)

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TARIC:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
MXHTS:: 8541210100
ECCN:: EAR99

EasyPACK™ CoolSiC™ Trench MOSFET Modules

Infineon Technologies EasyPACK™ CoolSiC™ Trench MOSFET Modules feature PressFIT contact technology and an integrated Negative Temperature Coefficient (NTC) temperature sensor. These modules operate at a 1200V drain-source voltage, feature a low inductive design, low switching losses, and high current density. The EasyPACK™ modules offer rugged mounting due to integrated mounting clamps and are packaged with a CTI >600. Applications include high-frequency switching devices, DC/DC converters, and DC chargers for EVs. With the Easy 2C Series, Infineon enhances high-power designs using SiC G2 technology and advanced .XT features. The .XT technology provides enhanced ruggedness and extended operating temperatures, while the second-generation SiC MOSFET technology offers improved gate oxide reliability and reduced on-resistance.

1200V CoolSiC™ Modules

Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.