BFP640H6327XTSA1

Infineon Technologies
726-BFP640H6327XTSA1
BFP640H6327XTSA1

Mfr.:

Description:
RF Bipolar Transistors RF BIP TRANSISTOR

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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More Information
Learn more about Infineon Technologies BFP640H6327XTSA1

In Stock: 34.679

Stock:
34.679 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,43 € 0,43 €
0,272 € 2,72 €
0,219 € 21,90 €
0,209 € 104,50 €
0,20 € 200,00 €
Full Reel (Order in multiples of 3000)
0,191 € 573,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
BFP 640 H6327
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
0,83 €
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: RF Bipolar Transistors
RoHS:  
BFP640
Si
SMD/SMT
SOT-343-4
AEC-Q100
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: RF Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Part # Aliases: BFP 640 H6327 SP000745306
Unit Weight: 6,400 mg
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TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210075
JPHTS:
854121000
KRHTS:
8541219000
MXHTS:
8541210100
ECCN:
EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

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